| PART |
Description |
Maker |
| SSTS20120 |
High Junction Temperature
|
Silikron Semiconductor ...
|
| SSBD10L200CT |
High Junction Temperature
|
Silikron Semiconductor ...
|
| SSBD5L300A |
High Junction Temperature
|
Silikron Semiconductor Co.,...
|
| SSTS3060CT |
High Junction Temperature
|
Silikron Semiconductor Co.,LTD.
Silikron Semiconductor ...
|
| SMM4F SMM4F5.0A |
High junction temperature Transil
|
STMicroelectronics
|
| TN4015H-6G |
High junction temperature : Tj=150?
|
STMicroelectronics
|
| SSTS30100CTF |
High Junction Temperature High ESD Protection High Forward & Reverse Surge capability
High Junction Temperature High ESD Protection High Forward & Reverse Surge capability
|
Silikron Semiconductor Co.,LTD.
Silikron Semiconductor ...
|
| LSIC2SD120C08 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C
|
Littelfuse
|
| BCR12CM-12LB BCR12CM-12LB-A8 |
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150隆?C)
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150°C)
|
Renesas Electronics Corporation
|
| BCR30AM-12LB BCR30AM-12LB-A8 |
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150隆?C)
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150°C)
|
Renesas Electronics Corporation
|
